Interband Transitions in Gan 0.02 as 0.98−x Sb X / Gaas " 0 Ͻ X Ï 0.11… Single Quantum Wells Studied by Contactless Electroreflectance Spectroscopy
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چکیده
Interband transitions in GaN0.02As0.98−xSbx /GaAs single quantum wells SQWs with 0 x 0.11 have been investigated by contactless electroreflectance CER . CER features related to the ground and excited state transitions have been observed and compared with those obtained from theoretical calculations, which were performed in the framework of the effective mass formalism model. It has been concluded that these SQWs are type I and the conduction band offset for this material system decreases from 80% to 50% when the Sb composition is increased from 0% to 11%. It shows that the band gap discontinuity for GaNAsSb/GaAs material system can be simply tuned by a change in Sb concentration.
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